We study resistive switching memory phenomena in conducting polymer PEDOT PSS. The cells have two electrodes, for example made of silver and platinum, at which the ions dissolve and then precipitate again. Devices such as resistive switching memory (RRAM) [1–3], phase change memory (PCM) [4–6], and spin-transfer torque memories (STTRAM) [7–9] have been proposed, each of them presenting advantages in terms of area occupation, speed, and scaling. According to Chua all resistive switching memories including ReRAM, MRAM and phase-change memory meet these criteria and are memristors. Researchers from the MIPT… 92,998 science & technology articles Here we review the development of in-memory computing using resistive switching devices, where the two-terminal structure of the devices, their resistive switching properties, and direct data processing in the memory can enable area- and energy-efficient computation. The resistive switching characteristics and switching mechanisms of the Au-implanted- ZrO 2 film are extensively investigated for nonvolatile memory applications. Flexible and transparent resistive switching memories are highly desired for the construction of portable and even wearable electronics. The structure comprises of an insulating layer (I) sandwiched between the two metal (M) electrodes. However, the lack of data for the Lissajous curves over a range of initial conditions or over a range of frequencies complicates assessments of this claim. The memory device shows reproducible and reliable bipolar resistive switching characteristics. A typical resistive memory device is composed of one layer of active materials sandwiched between two conductive electrodes (), displaying different states of current conductivity upon applying a voltage bias , , , , , .A binary state device means that it can switch between a high-resistance (low-conductivity) OFF state and a low-resistance (high-conductivity) ON state in response … This is the first report on switchable diode phenomenon based on conducting organic materials. A memory device based on natural organic material is a promising device toward the next generation of nonvolatile nanoelectronics. A resistive random access memory (RRAM) consists of a resistive switching memory cell having a metal-insulator-metal structure generally referred to as MIM structure. A solution-processed, chitosan-based resistive-switching memory device is demonstrated with Pt/Ag-doped chitosan/Ag structure. 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